Silicon Nanowire Transistors by Ahmet Bindal, Sotoudeh Hamedi-Hagh

Silicon Nanowire Transistors Ahmet Bindal, Sotoudeh Hamedi-Hagh ebook
Publisher: Springer International Publishing
Format: pdf
ISBN: 9783319271750
Page: 144

A theoretical analysis of the drain current and its fluctuation in silicon nanowire transistors is proposed. Effect of temperature on the characteristics of silicon nanowire transistor. Fabrication of poly-silicon nano-wire transistors on plastic substrates. Weber,*,†,§ Lutz Geelhaar,� Andrew P. Intruded Nickel-Silicide Contacts. One-by-one trap activation in Silicon nanowire transistors. Subthreshold behavior of junctionless silicon nanowire transistors from atomic scale simulations on ResearchGate, the professional network for scientists. 6.3.4 Silicon Nanowire Transistor. Hence, nanowire FETs' other name: “gate-all-around” transistors. Silicon-Nanowire Transistors with. Silicon Nanowire Transistors with a Channel Width of 4 nm. Fabricated by Atomic Force Microscope Nanolithography. Silicon nanowire (SiNW) field effect transistors (FETs) have been widely investigated as biological sensors for their remarkable sensitivity due to their large. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. Biosensors based on nano-scale electronic devices have the potential to achieve exquisite sensitivity for the direct detection of biomolecular interactions. Drain-induced barrier lowering (DIBL) is crucial in many applications of silicon nanowire transistors. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry and academia. Polarity-Controllable Silicon Nanowire Transistors.